nBn based infrared detectors using type-II InAs/(In,Ga)Sb superlattices

nBn based infrared detectors using type-II InAs/(In,Ga)Sb superlattices

著者名:

E. Plis ( Ctr. for High Technology Materials, Univ. of New Mexico, USA )
H. S. Kim ( Ctr. for High Technology Materials, Univ. of New Mexico, USA )
J. B. Rodriguez ( Institut d'Electronique du Sud (IES), Univ. Montpellier II, CNRS, France )
G. D. Bishop ( Ctr. for High Technology Materials, Univ. of New Mexico, USA )
Y. D. Sharma ( Ctr. for High Technology Materials, Univ. of New Mexico, USA )

掲載資料名:

Infrared technology and applications XXXIV

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

6940

発行年:

2008

巻:

1

開始ページ:

69400E-1

終了ページ:

69400E-10

総ページ数:

10

出版情報:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819471314 [0819471313]

言語:

英語

請求記号:

P63600/6940

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00052571
シリーズID:	PA00000029
会議名:	Defense, Security, and Sensing : Infrared Technology and Applications
回次:	2008 : 34th
会議開催地:	Orlando, Florida, USA
会議開催年:	2008.03.17-2008.03.20
論文注記:	Infrared technology and applications XXXIV, Orlando, Florida, USA, 17-20 March 2008. Emerging FPAs II, 69400E, 6940-12

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