Blank Cover Image

OPC optimization for double dipole lithography and its application on 45nm node with dry exposure

著者名:
  • S.-J. Park ( Semiconductor Manufacturing International Corp., China )
  • J.-K.Seo ( Semiconductor Manufacturing International Corp., China )
  • C. Li ( Semiconductor Manufacturing International Corp., China )
  • D. Liu ( Semiconductor Manufacturing International Corp., China )
  • P. An ( Semiconductor Manufacturing International Corp., China )
掲載資料名:
Optical Microlithography XXI
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
6924
発行年:
2008
巻:
3
開始ページ:
69243O-1
終了ページ:
69243O-8
総ページ数:
8
出版情報:
Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
ISSN:
0277786X
ISBN:
9780819471093 [0819471097]
言語:
英語
請求記号:
P63600/6924
資料種別:
国際会議録

類似資料:

1 国際会議録 Feasibility study of double exposure lithography for 65nm and 45nm node [5853-114]

Hsu, S., Van Den Broeke, D., Chen, J. F., Park, J., Hsu, M. C. W.

SPIE - The International Society of Optical Engineering
7 国際会議録 Implementation of double dipole lithography for 45-nm node poly and diffusion layer manufacturing with 0.93NA

M. -H. Wu, M. Hsu, S. Hsu, B. -J. Lu, Y. -F. Cheng, Y. -L. Chou, C. -H. Yang

SPIE - The International Society of Optical Engineering
2 国際会議録 Dark field double dipole lithography (DDL) for 45 nm node and beyond [6283-103]

Hsu, S., Burkhardt, M., Park, J., Van Den Broeke, D., Chen, F. J.

SPIE - The International Society of Optical Engineering
8 国際会議録 100-nm node lithography with KrF?

Ferri,J.E., Tyrrell,B., Astolfi,D.K., Yost,D., Davis,P., Wheeler,B., Mallen,R., Jarmolowicz,J., Cann,S.G., Liu,H.Y., …

SPIE-The International Society for Optical Engineering
3 国際会議録 Extension of 193 nm dry lithography to 45-nm half-pitch node: double exposure and double processing technique [6349-62]

Biswas, A. M., Li, J., Hiserote, J. A., Melvin III, L. S.

SPIE - The International Society of Optical Engineering
9 国際会議録 Double dipole lithography for 65-nm node and beyond: defect sensitivity characterization and reticle inspection

Hsu, S., Chu, T. -B., Van Den Broeke, D., Chen, J. F., Hsu, M., Corcoran, N. P., Volk, W., Ruch, W. E., Sier, J. -P., …

SPIE - The International Society of Optical Engineering
4 国際会議録 Double exposure technique for 45nm node and beyond [5992-63]

Hsu, S., Park, J., Van Den Broeke, D., Chen, J. F.

SPIE - The International Society of Optical Engineering
10 国際会議録 Comparing traditional OPC to field-based OPC for 45-nm node production

R. Farnbach, J. Tuttle, M. S. John, R. Brown, D. Gerold, K. Lucas, R. Lugg, J. Shiely, M. Rieger

SPIE - The International Society of Optical Engineering
5 国際会議録 Assessment of complementary double dipole lithography for 45 nm and 32 nm technologies

Postnikov, S. V., Robert, E., Thony, P., Patterson, K., Warrick, S., Henry, D., Torres, A., Toublon, O.

SPIE - The International Society of Optical Engineering
11 国際会議録 Double dipole lithography for 65-nm node and beyond: a technology readiness review

Hsu, S.D., Eurlings, M., Hendrickx, E., Van Den Broeke, D.J., Chiou, T.-B., Chen, J.F., Laidig, T.L., Shi, X., Finders, …

SPIE - The International Society of Optical Engineering
6 国際会議録 Era of double exposure in 7O nm node DRAM cell

Lim, C.-M., Eom, T.-S., Kim, S.-M., Bok, C., Ma, W.-K., Park, G.-D., Moon, S.-C., Kim, J.-W.

SPIE - The International Society of Optical Engineering
12 国際会議録 Process window OPC verification: dry versus immersion lithography for the 65 nm node [6154-169]

Borjon, A., Belledent, J., Trouiller, Y., Lucas, K., Couderc, C., Sundermann, F., Urbani, J. C., Rody, Y., Gardin, G., …

SPIE - The International Society of Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12