Comparative study of binary intensity mask and attenuated phase shift mask using hyper-NA immersion lithography for sub-45nm era

Comparative study of binary intensity mask and attenuated phase shift mask using hyper-NA immersion lithography for sub-45nm era

著者名:

T.-S. Eom ( Hynix Semiconductor, Inc., South Korea )
J.-T. Park ( Hynix Semiconductor, Inc., South Korea )
J.-H. Kang ( Hynix Semiconductor, Inc., South Korea )
S. Park ( Hynix Semiconductor, Inc., South Korea )
S. Koo ( Hynix Semiconductor, Inc., South Korea )

掲載資料名:

Optical Microlithography XXI

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

6924

発行年:

2008

巻:

1

開始ページ:

69240H-1

終了ページ:

69240H-10

総ページ数:

10

出版情報:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819471093 [0819471097]

言語:

英語

請求記号:

P63600/6924

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00052555
シリーズID:	PA00000029
会議名:	SPIE Advanced Lithography : Optical Microlithography
回次:	2008 : 21st
会議開催地:	San Jose, California, USA
会議開催年:	2008.02.26-2008.02.29
論文注記:	Optical Microlithography XXI, 26-29 February 2008, San Jose, California, USA. Session 4. Low-k1 Lithography I, 69240H, 6924-16

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