Porosity characteristics of ultra-low dielectric insulator films directly patterned by nano- imprint .lithography

Porosity characteristics of ultra-low dielectric insulator films directly patterned by nano- imprint .lithography

著者名:

H. W. Ro ( NIST, USA )
R. L. Jones ( NIST, USA )
H. Peng ( Univ. of Michigan, USA )
H.-J. Lee ( NIST, USA )
E. K. Lin ( NIST, USA )

掲載資料名:

Emerging lithographic technologies XII

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

6921

発行年:

2008

巻:

1

開始ページ:

69211M-1

終了ページ:

69211M-11

総ページ数:

11

出版情報:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819471062 [0819471062]

言語:

英語

請求記号:

P63600/6921

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00052552
シリーズID:	PA00000029
会議名:	SPIE Advanced Lithography : Emerging Lithographic Technologies
回次:	2008 : 12th
会議開催地:	San Jose, California, USA
会議開催年:	2008.02.26-2008.02.28
論文注記:	Emerging lithographic technologies XII, San Jose, California, USA, 26-28 February 2008 - Session 11. Nanoimprint III (69211M/6921-85)

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