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Epitaxial lateral overgrowth of (1100) m-plane GaN on m-plane 6H-SiC by metalorganic chemical vapor deposition

著者名:
  • X. Ni ( Virginia Commonwealth Univ., USA )
  • Ü. Özgür ( Virginia Commonwealth Univ., USA )
  • S. Chevtchenko ( Virginia Commonwealth Univ., USA )
  • J. Nie ( Virginia Commonwealth Univ., USA )
  • H. Morkoç ( Virginia Commonwealth Univ., USA )
掲載資料名:
Gallium nitride materials and devices III : 21-24 January 2008, San Jose, California, USA
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
6894
発行年:
2008
開始ページ:
689420-1
終了ページ:
689420-5
総ページ数:
5
出版情報:
Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
ISSN:
0277786X
ISBN:
9780819470690 [0819470694]
言語:
英語
請求記号:
P63600/6894
資料種別:
国際会議録

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