AlN/GaN-superlattice structures for the fabrication of intersubband detectors in the telecom wavelength range

AlN/GaN-superlattice structures for the fabrication of intersubband detectors in the telecom wavelength range

著者名:

D. Hofstetter ( Univ. of Neuchatel, Switzerland )
E. Baumann ( Univ. of Neuchatel, Switzerland )
F. R. Giorgetta ( Univ. of Neuchatel, Switzerland )
M. Maier ( Fraunhofer Institute for Applied Solid State Physics, Germany )
F. Guillot ( Equipe Mixte, CEA-CNRS-UJF Nanophysique et Semiconducteurs, France )

掲載資料名:

Gallium nitride materials and devices III : 21-24 January 2008, San Jose, California, USA

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

6894

発行年:

2008

開始ページ:

68940S-1

終了ページ:

68940S-10

総ページ数:

10

出版情報:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819470690 [0819470694]

言語:

英語

請求記号:

P63600/6894

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00052525
シリーズID:	PA00000029
会議名:	Photonics West - Optoelectronic Materials and Devices : Gallium Nitride Materials and Devices
回次:	2008 : 3rd
会議開催地:	San Jose, California, USA
会議開催年:	2008.01.21-2008.01.24
論文注記:	Gallium nitride materials and devices III, 21-24 January 2008, San Jose, California, USA - Session 7. Detectors, Lighting, and LEDs, Invited paper (68940S/6894-27)

類似資料:

1 国際会議録 Characterization of an optically pumped ZnO-based 3^rd order distributed feedback laser D. Hofstetter, Y. Bonetti, E. Baumann, F. R. Giorgetta, A.-H. El-Shaer Society of Photo-optical Instrumentation Engineers	7 国際会議録 Ultrafast intersubband transitions in GaN/AlGaN heterostructures at ~1.55-μm wavelength Heber, J.D., Gmachl, C.F., Ng, H.M., Cho, A.Y. SPIE - The International Society of Optical Engineering
2 国際会議録 Intersubband Absorptions in Doped and Undoped GaN/AlN Quantum Wells at Telecommunication Wavelengths Grown on Sapphire and 6H-SiC Substrates Helman, A., Tchernycheva, M., Lusson, A., Warde, E., Julien, F.H., Monroy, E., Fossard, F., Dang, Le Si, Daudin, B. Materials Research Society	8 国際会議録 Disordering of InGaN/GaN Superlattices After High-Pressure Annealing McCluskey, M. D., Romano, L. T., Krusor, B. S., Hofstetter, D., Bour, D. P., Kneissl, M., Johnson, N. M., Suski, T., … MRS - Materials Research Society
3 国際会議録 Quantum cascade lasers:between intersubband physics and applications Faist,J., Hofstetter,D., Muller,A., Beck,M. SPIE - The International Society for Optical Engineering	9 国際会議録 Relaxation Phenomena in GaN/AlN/6H-SiC Heterostructures Edwards, N. V., Batchelor, A. D., Buyanova, I. A., Madsen, L. D., Bremser, M. D., Davis, R. F., Aspnes, D. E., Monemar, … MRS - Materials Research Society
4 国際会議録 Phonon Dynamics and Lifetimes on AlN and GaN Crytallites Bergman, L., Alexson, D., Nemanich, R. J., Dutta, M., Stroscio, M. A., Balkas, C., Davis, R. F. MRS - Materials Research Society	10 国際会議録 Absorption Coefficient and Refractive Index of GaN, AlN, and AlGaN Alloys Muth, J. F., Brown, J. D., Johnson, M. A. L., Yu, Z., Kolbas, R. M., Cook, J. W., Jr., Schetzina, J. F. MRS - Materials Research Society
5 国際会議録 Short-Wavelength Intersubband Light Emission from Optically Pumped GaN/AlN Quantum Wells Roberto Paiella, Kristina Driscoll, Yitao Liao, Anirban Bhattacharyya, Lin Zhou, David J. Smith, Theodore D. Moustakas Materials Research Society	11 国際会議録 Efficient communication at telecom wavelengths using wavelength conversion and silicon photon-counting detectors M. E. Grein, L. E. Elgin, B. S. Robinson, D. O. Caplan, M. L. Stevens Society of Photo-optical Instrumentation Engineers
6 国際会議録 Gated-mode integrated single photon detector for telecom wavelengths Q.-L. Wu, Y. Liu, Z.-F. Han, W. Chen, Y.-M. Dai Society of Photo-optical Instrumentation Engineers	12 国際会議録 Plasma Chemistries for Dry Etching GaN, AlN, InGaN and InAlN Pearton, S. J., Vartuli, C. B., Lee, J. W., Donovan, S. M., MacKenzie, J. D., Abernathy, C. R., Shul, R. J., McLane, G. … MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12