Photoluminescence study of near-surface GaN/AlN superlattices

Photoluminescence study of near-surface GaN/AlN superlattices

著者名:

P. P. Paskov ( Linköping Univ., Sweden )
B. Monemar ( Linköping Univ., Sweden )
T. Paskova ( Kyma Technologies Inc., USA )
S. Kamiyama ( Meijo Univ., Japan )
H. Amano ( Meijo Univ., Japan )

掲載資料名:

Gallium nitride materials and devices III : 21-24 January 2008, San Jose, California, USA

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

6894

発行年:

2008

開始ページ:

68940G-1

終了ページ:

68940G-8

総ページ数:

8

出版情報:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819470690 [0819470694]

言語:

英語

請求記号:

P63600/6894

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00052525
シリーズID:	PA00000029
会議名:	Photonics West - Optoelectronic Materials and Devices : Gallium Nitride Materials and Devices
回次:	2008 : 3rd
会議開催地:	San Jose, California, USA
会議開催年:	2008.01.21-2008.01.24
論文注記:	Gallium nitride materials and devices III, 21-24 January 2008, San Jose, California, USA - Session 4. Characterization (68940G/6894-15)

類似資料:

1 国際会議録 Strain Evolution and Phonons in AlN/GaN Superlattices Darakchieva, V., Paskov, P.P., Schubert, M., Valcheva, B., Paskova, T., Arwin, H., Monemar, B., Amano, H., Akasaki, I. Materials Research Society	7 国際会議録 Photoluminescence and Electroluminescence Characterization of InxGa1-xN/InyGa1-yN Multiple Quantum Well Light Emitting Diodes Bergman, J.P., Pozina, G., Monemar, B., Kamiyama, S., Iwaya, M., Amano, H., Akasaki, I. Trans Tech Publications
2 国際会議録 Polarization-Dependent Spectroscopy of the Near-Bandgap Excitonic Emission in Free Standing GaN Paskov, P.P., Paskova, T., Holtz, P.O., Monemar, B. Materials Research Society	8 国際会議録 Microscopic emission properties of nonpolar a-plane GaN grown by HVPE (Invited Paper) [6121-05] Paskova, T., Kroeger, R., Paskov, P.P., Figge, S., Hommel, D., Monemar, B., Haskell, B., Fini, P., Speck, J.S., … SPIE - The International Society of Optical Engineering
3 国際会議録 Oxygen-related Shallow Acceptor in GaN Monemar, B., Paskov, P. P., Tuomisto, F., Saarinen, K., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I., Kimura, S. Materials Research Society	9 国際会議録 Photoluminescence Related to the 2-Dimensional Electron Gas in Modulation Doped GaN/AlGaN Structures Bergman, J. P., Lundstrom, T., Monemar, B., Amano, H., Akasaki, I. MRS - Materials Research Society
4 国際会議録 Photoluminescence of Excitons in n-Type In0.11Ga0.89N/In0.01Ga0.99N Multiple Quantum Wells Monemar, B., Paskov, P.P., Bergman, J.P., Pozina, G., Kamiyama, S., Iwaya, M., Amano, H., Akasaki, I. Materials Research Society	10 国際会議録 High Pressure Annealing of HVPE GaN Free-Standing Films: Redistribution of Defects and Stress Paskova, T., Suski, T., Bockowski, M., Paskov, P. P., Darakchieva, V., Monemar, B., Tuomisto, F., Saarinen, K., … Materials Research Society
5 国際会議録 Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures Monemar, B., Paskov, P.P., Haratizadeh, H., Pozina, G.R., Bergman, J.P., Kamiyama, S., Iwaya, M., Amano, H., Akasaki, I. SPIE-The International Society for Optical Engineering	11 国際会議録 Room Temperature Photoluminescence Linewidth versus Material Quality of GaN Monemar,B., Buyanova,I.A., Bergman,J.P., Amano,H., Akasaki,I. Trans Tech Publications
6 国際会議録 Photoluminescence and Electroluminescence Characterization of InxGa1-xN/InyGa1-yN Multiple Quantum Well Light Emitting Diodes Bergman, J.P., Pozina, G., Monemar, B., Kamiyama, S., Iwaya, M., Amano, H., Akasaki, I. Trans Tech Publications	12 国際会議録 Hydride vapour phase homoepitaxial growth of GaN on MOCVD-Grown 'Templates' Paskova, T., Tungasmita, S., Valcheva, E., Svedberg, E. B., Arnaudov, B., Evtimova, S., Persson, P. A., Henry, A., … MRS-Materials Research Society

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