The role of anisotropy for defect properties in a-plane GaN

The role of anisotropy for defect properties in a-plane GaN

著者名:

R. Kröger ( Univ. of York, United Kingdom )
T. Paskova ( Kyma Technologies Inc., USA )

掲載資料名:

Gallium nitride materials and devices III : 21-24 January 2008, San Jose, California, USA

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

6894

発行年:

2008

開始ページ:

689403-1

終了ページ:

689403-5

総ページ数:

5

出版情報:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819470690 [0819470694]

言語:

英語

請求記号:

P63600/6894

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00052525
シリーズID:	PA00000029
会議名:	Photonics West - Optoelectronic Materials and Devices : Gallium Nitride Materials and Devices
回次:	2008 : 3rd
会議開催地:	San Jose, California, USA
会議開催年:	2008.01.21-2008.01.24
論文注記:	Gallium nitride materials and devices III, 21-24 January 2008, San Jose, California, USA - Session 1. Growth I (689403/6894-02)

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