Ionizing radiation effects on CMOS imagers manufactured in deep submicron process

Ionizing radiation effects on CMOS imagers manufactured in deep submicron process

著者名:

V. Goiffon ( Univ. de Toulouse, ISAE, France )
P. Magnan ( Univ. de Toulouse, ISAE, France )
F. Bernard ( CNES, France )
G. Rolland ( CNES, France )
O. Saint-Pé ( EADS Astrium, France )

掲載資料名:

Sensors, cameras, and systems for industrial/scientific applications IX : 29-31 January 2008, San Jose, California, USA

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

6816

発行年:

2008

開始ページ:

681607-1

終了ページ:

681607-12

総ページ数:

12

出版情報:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819469885 [0819469882]

言語:

英語

請求記号:

P63600/6816

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00052447
シリーズID:	PA00000029
会議名:	IS&T/SPIE Electronic Imaging : Sensors, Cameras, and Systems for Industrial/Scientific Applications
回次:	2008 : 9th
会議開催地:	San Jose, California, USA
会議開催年:	2008.01.29-2008.01.31
論文注記:	Sensors, cameras, and systems for industrial/scientific applications IX, 29-31 January 2008, San Jose, California, USA - Session 1. Sensors I (6816-06)

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