InP nanowire photodetectors heteroepitaxially grown between silicon electrodes

InP nanowire photodetectors heteroepitaxially grown between silicon electrodes

著者名:

A. Sarkar ( Univ. of California/Davis, USA )
A. Chaudhry ( Univ. of California/Davis, USA )
V. J. Logeeswaran ( Univ. of California/Davis, USA )
S. Yi ( Philips Lumileds Lighting Co., USA )
M. S. Islam ( Univ. of California/Davis, USA )

掲載資料名:

Nanophotonics for communication : materials, devices, and systems IV : 10-11 September 2007, Boston, Massachusetts, USA

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

6779

発行年:

2007

開始ページ:

67790K-1

終了ページ:

67790K-7

総ページ数:

7

出版情報:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819469397 [0819469394]

言語:

英語

請求記号:

P63600/6779

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00052411
シリーズID:	PA00000029
会議名:	Optics East : Nanophotonics for Communication
回次:	2007 : 4th
会議開催地:	Boston, Massachusetts, USA
会議開催年:	2007.09.10-2007.09.11
論文注記:	Nanophotonics for communication: Materials, Devices, and Systems IV, 10-11 September 2007, Boston, Massachusetts, USA - Session 4. Photonic Crystal-based Novel Devices (6779-19)

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