GaSe and GaTe anisotropic layered semiconductors for radiation detectors

GaSe and GaTe anisotropic layered semiconductors for radiation detectors

著者名:

K. C. Mandal ( EIC Labs., Inc. (USA) )
M. Choi ( EIC Labs., Inc. (USA) )
S. H. Kang ( EIC Labs., Inc. (USA) )
R. D. Rauh ( EIC Labs., Inc. (USA) )
J. Wei ( Stony Brook Univ. (USA) )

掲載資料名:

Hard X-ray and gamma-ray detector physics IX : 27-29 August 2007, San Diego, California

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

6706

発行年:

2007

開始ページ:

67060E-1

終了ページ:

67060E-10

総ページ数:

10

出版情報:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819468543 [0819468541]

言語:

英語

請求記号:

P63600/6706

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00052352
シリーズID:	PA00000029
会議名:	SPIE Optical Engineering and Applications : Hard X-Ray and Gamma-Ray Detector Physics
回次:	2007 : 9th
会議開催地:	San Diego, California, USA
会議開催年:	2007.08.27-2007.08.29
論文注記:	Hard X-Ray and Gamma-Ray Detector Physics IX, August 27-29, 2007, San Diego, CA, USA - Session 4. Other Materials I (6706-13)

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