Characterization of Tin Oxide Grown by Molecular Beam Epitaxy

Characterization of Tin Oxide Grown by Molecular Beam Epitaxy

著者名:

G. Medina ( University at Buffalo, Buffalo, NY, USA )
P.A. Stampe ( Florida A&M University, Tallahassee, FL, USA )
R.J. Kennedy
R.J. Reeves ( University of Canterbury, New Zealand )
G.T. Dang

掲載資料名:

Oxide semiconductors : symposium held December 1-6, 2013, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

1633

発行年:

2014

開始ページ:

13

終了ページ:

18

総ページ数:

6

出版情報:

Warrendale, Pa: Materials Research Society

ISSN:

02729172

ISBN:

9781605116105 [1605116106]

言語:

英語

請求記号:

M23500/1633

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00052298
シリーズID:	PA00000011
会議名:	Oxide Semiconductors
回次:	2013
会議開催地:	Boston, Massachusetts, U.S.A.
会議開催年:	2013.12.01-2013.12.06
論文注記:	2013 MRS Fall Meeting, Symposium R December 1-6, 2013, Boston, Massachusetts, USA ; Synthesis

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