Effect of Reducing Thickness of TiN Buffer Layers on Epitaxial Growth of GaN Layes

Effect of Reducing Thickness of TiN Buffer Layers on Epitaxial Growth of GaN Layes

著者名:

K. Ito

掲載資料名:

PRICM 6 : selected, peer reviewed papers from The sixth Pacific Rim International Conference on Advanced Materials and Processing, November 5-9, 2007, ICC Jeju, Jeju Island, Korea

シリーズ名:

Materials science forum

シリーズ巻号:

561-565

発行年:

2007

巻:

561-565

パート:

2

開始ページ:

1217

終了ページ:

1220

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494620 [0878494626]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00051900
シリーズID:	PA00000012
会議名:	The Sixth Pacific Rim International Conference On Advanced Materials and Processing
回次:	6th
会議開催地:	Jeju Island, Korea
会議開催年:	2007.11.05-2007.11.09

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