Characterization of InGaN and InAlN Epilayers by Microdiffraction X-Ray Reciprocal Space Mapping

Characterization of InGaN and InAlN Epilayers by Microdiffraction X-Ray Reciprocal Space Mapping

著者名:

V. Kachkanov

掲載資料名:

Compound semiconductors for generating, emitting, and manipulating energy : symposium held November 28-December 2, 2011, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

1396

発行年:

2012

開始ページ:

193

終了ページ:

198

総ページ数:

6

出版情報:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781605113739 [1605113735]

言語:

英語

請求記号:

M23500/1396

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00051882
シリーズID:	PA00000011
会議名:	2011 MRS Fall Meeting ; Symposium O, Compound Semiconductors for Generating, Emitting and Manipulating Energy
回次:	2011
会議開催地:	Boston, MA
会議開催年:	2011.11.28-2011.12.02

類似資料:

1 国際会議録 Electron Micro-Probe Analysis and Cathodoluminescence Spectroscopy of Rare Earth-Implanted GaN Dalmasso, S., Martin, R.W., Edwards, P.R., Katchkanov, V., O'Donnell, K.P., Lorenz, K., Alves, E., Wahl, U., Pipeleers, … Materials Research Society	7 国際会議録 High Temperature Implantation of Tm in GaN Lorenz, K., Wahl, U., Alves, E., Dalmasso, S., Martin, R.W., O'Donnell, K.P. Materials Research Society
2 国際会議録 Extended X-Ray Absorption Fine Structure Studies of InGaN Epilayers Katchkanov, V., O'Donnell, K. P., Mosselmans, J. F. W., Hernandez, S., Martin, R. W., Nanishi, Y., Kurouchi, M., Watson, … Materials Research Society	8 国際会議録 Strain and Compositional Analysis of InGaN/GaN Layers Pereira, Sergio, Correia, Maria. R., Pereira, Estela, Trager-Cowan, C., Sweeney, F., Edwards, P. R., O'Donnell, K.P., … Materials Research Society
3 国際会議録 Luminescence and Structural Properties of InGaN Epilayer, Quantum Well and Quantum Dot Samples Using Synchrotron Excitation O'Donnell, K.P., Martin, R. W., White, M. E., Tobin, M.J., Mosselmans, J. F. W., Watson, I. M., Damilano, B., Grandjean, … Materials Research Society	9 国際会議録 Extended X-ray Absorption Fine Structure Studies of GaN Epilayers Doped In Shin With Er and Eu During Molecular Beam Epitaxy Katchkanov, V., Mosselmans, J.F.W., Dalmasso, S., O'Donnell, K.P., Martin, R.W., Briot, O., Rousseau, N., Halambalakis, … Materials Research Society
4 国際会議録 Dependence of the E2 and A1(LO) Modes on InN Fraction in InGaN Epilayers Hernandez, S., Cusco, R., Artus, L., O'Donnell, K. P., Martin, R. W., Watson, I. M., Nanishi, Y., Kurouchi, M., … Materials Research Society	10 国際会議録 Anomalous Composition Dependence of Optical Energies of MBE-Grown InGaN Femandez-Torrente, I., Amabile, D., Martin, R.W., O'Donnell, K.P., Mosselmans, J.F.W., Calleja, E., Naranjo, F.B. Materials Research Society
5 国際会議録 Structural and Optical Properties of MOCVD InAlN Epilayers Hemandez, S., Wang, K., Amabile, D., Nogales, E., Pastor, D., Cusco, R., Artus, L., Martin, R. W., O;Donnell, K. P., … Materials Research Society	11 国際会議録 X-ray Excited Optical Luminescence studies of InGaN and rare-earth doped GaN epilayers Katchkanov, V., Mosselmans, J. F. W., O'Donnell, K. P., Poolton, N. R. J., Hernandez, S. Materials Research Society
6 国際会議録 3-D Mapping of Strain and Defects in a ZnSe Epilayer Using a Variable Energy Electron Beam Trager-Cowan,C., Paterson,A.M., Martin,R.W., O'Donnell,K.P., Mullins,J.T., Horsburgh,G., Prior,K.A., Cavenett,B.C. Trans Tech Publications	12 国際会議録 Processing of Rare Earth Doped GuN With Ion Beams Lorenz, K., Wahl, U., Alves, E., Wojtowicz, T., Ruterana, P., Dalmasso, S., Martin, R.W., O'Donnell, K.P., Ruffenach, … Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12