Properties of MOCVD-Grown GaN:Gd Films for Spintronic Devices

Properties of MOCVD-Grown GaN:Gd Films for Spintronic Devices

著者名:

掲載資料名:

Compound semiconductors for generating, emitting, and manipulating energy : symposium held November 28-December 2, 2011, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

1396

発行年:

2012

開始ページ:

133

終了ページ:

138

総ページ数:

6

出版情報:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781605113739 [1605113735]

言語:

英語

請求記号:

M23500/1396

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00051882
シリーズID:	PA00000011
会議名:	2011 MRS Fall Meeting ; Symposium O, Compound Semiconductors for Generating, Emitting and Manipulating Energy
回次:	2011
会議開催地:	Boston, MA
会議開催年:	2011.11.28-2011.12.02

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