Damage Formation in GaN Under Medium Energy Range Implantation of Rare Earth Ions: a Combined TEM, XRD and RBS/C Investigation

Damage Formation in GaN Under Medium Energy Range Implantation of Rare Earth Ions: a Combined TEM, XRD and RBS/C Investigation

著者名:

B. Lacroix

掲載資料名:

Rare-earth doping of advanced materials for photonic applications--2011 : symposium held April 25-29, 2011, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

1342

発行年:

2012

開始ページ:

27

終了ページ:

34

総ページ数:

8

出版情報:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781605113197 [1605113190]

言語:

英語

請求記号:

M23500/1342

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00051871
シリーズID:	PA00000011
会議名:	2011 Spring Meeting of the Materials Research Society ; Symposium V, Rare Earth Doping of Advanced Materials for Photonic Applications
回次:	2011
会議開催地:	San Francisco, CA
会議開催年:	2011.04.25-2011.04.29

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