Radiation-Induced Back Channel Leakage in 60 MeV-Proton-Irradiated 0.10μm-CMOS Partially Depleted SOI MOSFETs

Radiation-Induced Back Channel Leakage in 60 MeV-Proton-Irradiated 0.10μm-CMOS Partially Depleted SOI MOSFETs

著者名:

掲載資料名:

Proceedings of the 7th European Conference on Radiation and its Effects on Components and Systems : RADECS 2003, 15-19 September 2003, Noordwijk, the Netherlands

シリーズ名:

ESA SP

シリーズ巻号:

536

発行年:

2004

開始ページ:

425

終了ページ:

432

総ページ数:

8

出版情報:

Noordwijk, the Netherlands: ESA Publication Division

ISSN:

03796566

ISBN:

9789290928461 [9290928468]

言語:

英語

請求記号:

E11690/536

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00051861
シリーズID:	PA00000009
会議名:	7th European Conference on Radiation and its Effects on Components and Systems (RADECS 2003)
回次:	7th
会議開催地:	Noordwijk, The Netherlands
会議開催年:	2003.09.15-2003.09.19

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