HfO2 Gate Dielectrics Deposited via Tetrakis Dlethylamido Hafnium
- 著者名:
- 掲載資料名:
- Physicas and technology of high-k gate dielectrics : proceedings of the International Symposium on High Dielectric Constant Materials : Materials Science, Processing, and Reliability, and Manufacturing Issues
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 2002-28
- 発行年:
- 2002
- 開始ページ:
- 49
- 終了ページ:
- 62
- 総ページ数:
- 14
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566773959 [1566773954]
- 言語:
- 英語
- 請求記号:
- E23400/200228
- 資料種別:
- 国際会議録
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