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BURIED SILICIDE LAYERS IN SILICON USING WAFER BONDING WITH COBALT AS INTERFACIAL LAYER

著者名:
掲載資料名:
Proceedings of the Second International Symposium on Semiconductor Wafer Bonding--Science, Technology, and Applications
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
1993-29
発行年:
1993
開始ページ:
249
終了ページ:
256
総ページ数:
8
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566770682 [1566770688]
言語:
英語
請求記号:
E23400/940556
資料種別:
国際会議録

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