Mushroom Gates Fabricated Using a Quad-Layer Composed of Si02, Si3N4 and Resist with Metal Transfer Layer for GaAs PHEMT IC's

Mushroom Gates Fabricated Using a Quad-Layer Composed of Si0₂, Si₃N₄ and Resist with Metal Transfer Layer for GaAs PHEMT IC's

著者名:

T. Taylor

掲載資料名:

Proceedings of the Eighteenth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XVIII)

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1993-27

発行年:

1993

開始ページ:

178

終了ページ:

183

総ページ数:

6

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770699 [1566770696]

言語:

英語

請求記号:

E23400/940142

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00051845
シリーズID:	PA00000028
会議名:	Eighteenth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XVIII) : 183rd Meeting of The Electrochemical Society
回次:	18th ; 183rd
会議開催地:	Honolulu, HI
会議開催年:	1993.05.16-1993.05.21

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