Performance Impact of silicided Source/Drain/Gate on Deep Submicron CMOS Circuits

Performance Impact of silicided Source/Drain/Gate on Deep Submicron CMOS Circuits

著者名:

掲載資料名:

Proceedings of the Symposia on Interconnects, Contact Metallization, and Multilevel Metallization and Reliability for Semiconductor Devices, Interconnects, amd Thin Insulator Materials

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1993-25

発行年:

1993

開始ページ:

268

終了ページ:

274

総ページ数:

7

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770675 [156677067X]

言語:

英語

請求記号:

E23400/940140

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00051843
シリーズID:	PA00000028
会議名:	Third International Symposium on Interconnects, Contact Metallization and Multilevel Metallization ; 183rd Meeting of the Elecrochemical Society
回次:	3rd ; 183rd
会議開催地:	Honolulu, HI
会議開催年:	1993.05.19-1993.05.21

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