Intrinsic Surface Defects on 4H SiC Substrates

Intrinsic Surface Defects on 4H SiC Substrates

著者名:

掲載資料名:

Silicon Carbide 2010--materials, processing and devices : symposium held April 5-9, 2010, San Francisco, California

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

1246

発行年:

2010

開始ページ:

43

終了ページ:

48

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605112237 [1605112232]

言語:

英語

請求記号:

M23500/1246

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00050335
シリーズID:	PA00000011
会議名:	MRS Spring Meeting : Symposium B
回次:	2010
会議開催地:	San Francisco, California, USA
会議開催年:	2010.04.05-2010.04.09

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2 国際会議録 Defect Level of the Carbon Vacancy-Carbon Antisite Pair Center in SI 4H SiC M.E. Zvanut, G. Ngetich, H.J. Chung, A.Y. Polyakov, M. Skowronski Trans Tech Publications	8 国際会議録 Deep Level Point Defects in Semi-Insulating SiC Zvanut, M.E., Lee, W.W., Wang, H., Mitchel, W.C., Mitchell, W.D. Trans Tech Publications
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4 国際会議録 The OW of the Vanadium Donor and Acceptor Levels in Semi-Insulating 4H-SiC and 6H-SiC Lee, W.W., Zvanut, M.E. Trans Tech Publications	10 国際会議録 Extended Defects in 4H-SiC PiN Diodes Twigg, M.E., Stahlbush, R.E., Fatemi, M., Arthur, S.D., Fedison, J.B., Tucker, J.B., Wang, S. Materials Research Society
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