Normally-Off GaN MOSFETs on Silicon Substrates with High-Temperature Operation
- 著者名:
Hiroshi Kambayashi Yuki Niiyama Takehiko Nomura Masayuki Iwami yoshihiro Satoh Sadahiro Kato - 掲載資料名:
- III-nitride materials for sensing, energy conversion and controlled light-matter interactions : symposium held November 29-December 3, 2009, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 1202
- 発行年:
- 2010
- 開始ページ:
- 113
- 終了ページ:
- 118
- 総ページ数:
- 6
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781605111759 [1605111759]
- 言語:
- 英語
- 請求記号:
- M23500/1202
- 資料種別:
- 国際会議録
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