Gate Stack Reliability of High-Mobility 4H SiC Lateral MOSFETs with Deposited Al₂O₃ Gate Dielectric

Gate Stack Reliability of High-Mobility 4H SiC Lateral MOSFETs with Deposited Al₂O₃ Gate Dielectric

著者名:

掲載資料名:

Reliability and materials issues of semiconductor optical and electrical devices and materials : symposium held November 29 - December 3, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

1195

発行年:

2010

開始ページ:

135

終了ページ:

142

総ページ数:

8

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605111681 [1605111686]

言語:

英語

請求記号:

M23500/1195

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00050318
シリーズID:	PA00000011
会議名:	MRS Fall Meeting
回次:	2009
会議開催地:	Boston, Massachusetts, USA
会議開催年:	2009.11.30-2009.12.03

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