1.2 kV AlGaN/GaN Schottky Barrier Diode Employing As+ Ion Implantation on SiO₂ Passivation Layer

1.2 kV AlGaN/GaN Schottky Barrier Diode Employing As+ Ion Implantation on SiO₂ Passivation Layer

著者名:

掲載資料名:

Compound semiconductors for energy applications and environmental sustainability : symposium held April 14-16, 2009, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

1167

発行年:

2009

開始ページ:

47

終了ページ:

52

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605111407 [1605111406]

言語:

英語

請求記号:

M23500/1167

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00049474
シリーズID:	PA00000011
会議名:	MRS Spring meeting : Symposium O
回次:	2009
会議開催地:	San Francisco, California, USA
会議開催年:	2009.04.14-2009.04.16

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