Conformal MOCVD Deposition of GeSbTe in High Aspect Ratio Via Structure for Phase Change Memory Applications | 東京工業大学附属図書館文献データベース

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Conformal MOCVD Deposition of GeSbTe in High Aspect Ratio Via Structure for Phase Change Memory Applications

著者名:

Matthias Stender

Smuruthi Kamepalli

Regino Sandoval

Jeffery Founrnier

Stephen Hudgens

さらに 13 件

掲載資料名:

Materials and physics for nonvolatile memories : symposium held April 14-17, 2009, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

1160

発行年:

2009

開始ページ:

191

終了ページ:

196

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605111399 [1605111392]

言語:

英語

請求記号:

M23500/1160

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00049470
シリーズID:	PA00000011
会議名:	MRS Spring Meeting
回次:	2009
会議開催地:	San Francisco, California, USA
会議開催年:	2009.04.14-2009.04.17

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