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Interface and Electrical Properties of Atomic-layer-deposited HfAlO Gate Dielectric for N-channel GaAs MOSFETs

著者名:
掲載資料名:
CMOS gate-stack scaling--materials, interfaces and reliability implications : symposium held April 14-16, 2009, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
1155
発行年:
2009
開始ページ:
151
終了ページ:
156
総ページ数:
6
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781605111285 [1605111287]
言語:
英語
請求記号:
M23500/1155
資料種別:
国際会議録

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