Effect of SiC Power DMOSFET Threshold-Voltage Instability

Effect of SiC Power DMOSFET Threshold-Voltage Instability

著者名:

A.J. Lelis

掲載資料名:

Silicon Carbide 2008--materials, processing and devices : symposium held March 25-27, 2008, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

1069

発行年:

2008

開始ページ:

215

終了ページ:

220

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605110394 [1605110396]

言語:

英語

請求記号:

M23500/1069

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00049372
シリーズID:	PA00000011
会議名:	MRS Spring Meeting
回次:	2008
会議開催地:	San Francisco, California, U.S.A.
会議開催年:	2008.05.25-2008.05.27

類似資料:

1 国際会議録 Implications of Threshold-Voltage Instability on SiC DMOSFET Operation A.J. Lelis, D.B. Habersat, R. Green, N. Goldsman Trans Tech Publications	7 国際会議録 Simulating the Influence of Mobile Ionic Oxide Charge on SiC MOS Bias-Temperature Instability Measurements D.B. Habersat, N. Goldsman, A.J. Lelis Trans Tech Publications
2 国際会議録 Temperature-Dependence of SiC MOSFET Threshold-Voltage Instability A.J. Lelis, D.B. Habersat, R. Green, N. Goldsman Trans Tech Publications	8 国際会議録 Feasibility of SiC Threshold Voltage Drift Characterization for Reliability Assessment in Production Environments D.B. Habersat, R. Green, A.J. Lelis Trans Tech Publications
3 国際会議録 Effect of ON-State Stress on SiC DMOSFET Subthreshold I-V Characteristics A.J. Lelis, R. Green, D.B. Habersat, N. Goldsman Trans Tech Publications	9 国際会議録 Investigation of On and Off State Characteristics of 4H-SiC DMOSFETs S. Potbhare, N. Goldsman, A. Akturk, A.J. Lelis, R. Green Trans Tech Publications
4 国際会議録 Bias Stress-Induced Threshold-Voltage Instability of SiC MOSFETs Lelis, A.J., Habersat, D.B., Lopez, G., McGarrity, J.M., McLean, F.B., Goldsman, N. Trans Tech Publications	10 国際会議録 Mixed Mode Modeling and Characterization of a 4H-SiC Power DMOSFET Based DC-DC Power Converter S. Potbhare, N. Goldsman, A. Akturk, A.J. Lelis Trans Tech Publications
5 国際会議録 Measurement Issues Affecting Threshold-Voltage Instability Characterization of SiC MOSFETs R. Green, A.J. Lelis, D.B. Habersat Trans Tech Publications	11 国際会議録 Two-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETs A.J. Lelis, D.B. Habersat, R. Green, N. Goldsman Trans Tech Publications
6 国際会議録 Threshold-Voltage Instability in SiC MOSFETs Due to Near-Interfacial Oxide Traps A.J. Lelis, R. Green, D.B. Habersat Trans Tech Publications	12 国際会議録 A Study of High Temperature DC and AC Gate Stressing on the Performance and Reliability of Power SiC MOSFETs R. Green, A.J. Lelis, M. El, D.B. Habersat Trans Tech Publications

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