Long-Term Characterization of 6H-SiC Transistor Integrated Circuit Technology Operating at 500 ℃ | 東京工業大学附属図書館文献データベース

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Long-Term Characterization of 6H-SiC Transistor Integrated Circuit Technology Operating at 500 ℃

著者名:

Philip G. Neudeck

Glenn M. Beheim

Robert S. Okojie

Roger D. Meredith

Terry L. Ferrier

Michael J. Krasowski

Norman F. Prokop

さらに 6 件

掲載資料名:

Silicon Carbide 2008--materials, processing and devices : symposium held March 25-27, 2008, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

1069

発行年:

2008

開始ページ:

209

終了ページ:

214

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605110394 [1605110396]

言語:

英語

請求記号:

M23500/1069

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00049372
シリーズID:	PA00000011
会議名:	MRS Spring Meeting
回次:	2008
会議開催地:	San Francisco, California, U.S.A.
会議開催年:	2008.05.25-2008.05.27

類似資料:

1 国際会議録 SiC Field Effect Transistor Technology Demonstrating Prolonged Stable Operation at 500℃ P.G. Neudeck, D.J. Spry, L.Y. Chen, R.S. Okojie, G.M. Beheim, R. Meredith, T. Ferrier Trans Tech Publications	7 国際会議録 Control of Trenching and Surface Roughness in Deep Reactive Ion Etched 4H and 6H SiC Glenn M. Beheim, Laura J. Evans Materials Research Society
2 国際会議録 Fabrication and Testing of 6H-SiC JFETs for Prolonged 500°C Operation in Air Ambient D.J. Spry, P.G. Neudeck, L.Y. Chen, G.M. Beheim, R.S. Okojie Trans Tech Publications	8 国際会議録 Processing and Prolonged 500 ° C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect D.J. Spry, P.G. Neudeck, L.Y. Chen, D. Lukco, C.W. Chang Trans Tech Publications
3 国際会議録 Characterization of 6H-SiC JFET Integrated Circuits over a Broad Temperature Range from -150°C to +500°C P.G. Neudeck, M.J. Krasowski, L.Y. Chen, N.F. Prokop Trans Tech Publications	9 国際会議録 Packaging Technologies for 500°C SiC Electronics and Sensors L.Y. Chen, R.W. Johnson, P.G. Neudeck, G.M. Beheim, D.J. Spry Trans Tech Publications
4 国際会議録 Confinement of Screw Dislocations to Predetermined Lateral Positions in (0001) 4H-SiC Epilayers Using Homoepitaxial Web Growth Neudeck, Philip G., Spry, David J., Trunek, Andrew J., Powell, J.Anthony, Beheim, Glenn M. Materials Research Society	10 国際会議録 Electrical Characterization of a 4H-SiC JFET Wafer: DC Parameter Variations for Extreme Temperature IC Design P.G. Neudeck, L.Y. Chen, D.J. Spry, G.M. Beheim, C.W. Chang Trans Tech Publications
5 国際会議録 Experimentally Observed Electrical Durability of 4H-SiC JFET ICs Operating from 500 °C to 700 °C P.G. Neudeck, D.J. Spry, L.Y. Chen, D. Lukco, C.W. Chang, G.M. Beheim Trans Tech Publications	11 国際会議録 Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect D.J. Spry, P.G. Neudeck, L.Y. Chen, L.J. Evans, D. Lukco Trans Tech Publications
6 国際会議録 Prolonged 500°C Operation of 6H-SiC JFET Integrated Circuitry P.G. Neudeck, D.J. Spry, L.Y. Chen, C.W. Chang, G.M. Beheim Trans Tech Publications	12 国際会議録 Silicon Carbide Die Attach Scheme For 500℃ Operation Chen, Liang-Yu, Hunter, Gary W., Neudeck, Philip G. Materials Research Society

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