Influence of Shockley Stacking Fault Expansion and Contraction on the Electrical Behavior of 4H-SiC DMOSFETs and MPS Diodes | 東京工業大学附属図書館文献データベース

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Influence of Shockley Stacking Fault Expansion and Contraction on the Electrical Behavior of 4H-SiC DMOSFETs and MPS Diodes

著者名:

Joshua David Caldwell

Robert E. Stahlbush

Eugene A. Imhoff

Orest J. Glembocki

Marko J. Tadjer

さらに 4 件

掲載資料名:

Silicon Carbide 2008--materials, processing and devices : symposium held March 25-27, 2008, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

1069

発行年:

2008

開始ページ:

195

終了ページ:

202

総ページ数:

8

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605110394 [1605110396]

言語:

英語

請求記号:

M23500/1069

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00049372
シリーズID:	PA00000011
会議名:	MRS Spring Meeting
回次:	2008
会議開催地:	San Francisco, California, U.S.A.
会議開催年:	2008.05.25-2008.05.27

類似資料:

1 国際会議録 Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes J.D. Caldwell, R.E. Stahlbush, O.J. Glembocki, K.D. Hobart, K.X. Liu Trans Tech Publications	7 国際会議録 Temperature and Time Dependent Threshold Voltage Instability in 4H-SiC Power DMOSFET Devices M.J. Tadjer, K.D. Hobart, E.A. Imhoff, F.J. Kub Trans Tech Publications
2 国際会議録 Optical, Electrical and Lifetime Characterization of In-Grown Stacking Faults in 4H-SiC Joshua David Caldwell, Paul B. Klein, Orest J. Glembocki, Robert E. Stahlbush, Kendrick X. Liu, Karl D. Hobart, Fritz … Materials Research Society	8 国際会議録 Effect of Stacking Faults Originating from Half Loop Arrays on Electrical Behavior of 10 kV 4H-SiC PiN Diodes R.E. Stahlbush, Q.C.J. Zhang, A.K. Agarwal, N.A. Mahadik Trans Tech Publications
3 国際会議録 Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes Q.C. Zhang, A. Agarwal, A.A. Burk, M.J. O'Loughlin, J. Palmour Trans Tech Publications	9 国際会議録 Non-Destructive Electro- and Photo-Luminescence Imaging of Dislocations in SiC Epitaxy Kendrick X. Liu, Robert E. Stahlbush, Joshua D. Caldwell, Karl D. Hobart, Francis J. Kub, Joseph J. Sumakeris Materials Research Society
4 国際会議録 Ultraviolet Photoluminescence Imaging of Stacking Fault Contraction in 4H-SiC Epitaxial Layers N.A. Mahadik, R.E. Stahlbush, J.D. Caldwell, K.D. Hobart Trans Tech Publications	10 国際会議録 Determination of the Core-structure of Shockley Partial Dislocations in 4H-SiC Yi Chen, Ning Zhang, Xianrong Huang, Joshua D Caldwell, Kendrick X Liu, Robert E Stahlbush, Michael Dudley Materials Research Society
5 国際会議録 Influence of Temperature on the Saturation of the Forward Voltage Drift in SiC Pin Diodes J.D. Caldwell, R. Stahlbush, O. Glembocki, K. Hobart Electrochemical Society	11 国際会議録 Degradation of Majority Carrier Conductions and Blocking Capabilities in 4H-SiC High Voltage Devices due to Basal Plane Dislocations Sei-Hyung Ryu, Qingchun Zhang, Husna Fatima, Sarah Haney, Robert Stahlbush, Anant Agarwal Materials Research Society
6 国際会議録 On the Luminescence and Driving Force of Stacking Faults in 4H-SiC J.D. Caldwell, A.J. Giles, R.E. Stahlbush, M.G. Ancona, O.J. Glembocki Trans Tech Publications	12 国際会議録 Improved GaN Homo-Junction, Ultraviolet, Light-Emitting Diodes Grown on Step- Free 4H-SiC Mesas J. D. Caldwell, M. Mastro, K. D. Hobart, O. Glembocki, C. R. Eddy, N. Bassim, M. Tadjer, A. Holm, R. Henry, M. Ywigg, P. … Electrochemical Society

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