Characterization and Growth Mechanism of B₁₂As₂ Epitaxial Layers Grown on (1-100) 15R-SiC | 東京工業大学附属図書館文献データベース

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Characterization and Growth Mechanism of B₁₂As₂ Epitaxial Layers Grown on (1-100) 15R-SiC

著者名:

James. H. Edgar

さらに 4 件

掲載資料名:

Silicon Carbide 2008--materials, processing and devices : symposium held March 25-27, 2008, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

1069

発行年:

2008

開始ページ:

181

終了ページ:

188

総ページ数:

8

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605110394 [1605110396]

言語:

英語

請求記号:

M23500/1069

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00049372
シリーズID:	PA00000011
会議名:	MRS Spring Meeting
回次:	2008
会議開催地:	San Francisco, California, U.S.A.
会議開催年:	2008.05.25-2008.05.27

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