Influence of Growth Conditions and Substrate Properties on Formation of Interfacial Dislocations and Dislocation Half-loop Arrays in 4H-SiC(0001) and (000-1) Epitaxy
- 著者名:
Hidekazu Tsuchida Isaho Kamata Kazutoshi Kojima Kenji Momose Michiya Odawara Tetsuo Takahashi Yuuki Ishida Keiichi Matsuzawa - 掲載資料名:
- Silicon Carbide 2008--materials, processing and devices : symposium held March 25-27, 2008, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 1069
- 発行年:
- 2008
- 開始ページ:
- 123
- 終了ページ:
- 128
- 総ページ数:
- 6
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781605110394 [1605110396]
- 言語:
- 英語
- 請求記号:
- M23500/1069
- 資料種別:
- 国際会議録
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