Integrated GaN/AlGaN/GaN HEMTs with Preciously Controlled Resistance on Silicon Substrate Fabricated by Ion Implantation
- 著者名:
- 掲載資料名:
- Advances in GaN, GaAs, SiC and related alloys on silicon substrates : symposium held March 24-28, 2008, San Francisco, U.S.A
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 1068
- 発行年:
- 2008
- 開始ページ:
- 33
- 終了ページ:
- 38
- 総ページ数:
- 6
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781605110387 [1605110388]
- 言語:
- 英語
- 請求記号:
- M23500/1068
- 資料種別:
- 国際会議録
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6
国際会議録
Effect of Base Impurity Concentration on DC Characteristics of Double Ion Implanted 4H-SiC BJTs
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