Voids in Hydrogenated Amorphous Silicon: A Comparison of ab initio Simulations and Proton NMR Studies

Voids in Hydrogenated Amorphous Silicon: A Comparison of ab initio Simulations and Proton NMR Studies

著者名:

掲載資料名:

Amorphous and polycrystalline thin-film silicon science and technology--2008 : symposium held March 25-28, 2008, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

1066

発行年:

2008

開始ページ:

279

終了ページ:

284

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605110363 [1605110361]

言語:

英語

請求記号:

M23500/1066

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00049370
シリーズID:	PA00000011
会議名:	Materials Research Society meeting ; Symposium on amorphous and polycrystalline thin-film silicon science and technology
回次:	2008
会議開催地:	San Francisco, California, U.S.A.
会議開催年:	2008.05.25-2008.05.28

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