Improved Model to Determine the Generation Lifetime in Short Channel SOI nMOSFETs

Improved Model to Determine the Generation Lifetime in Short Channel SOI nMOSFETs

著者名:

掲載資料名:

Silicon-on-insulator technology and devices 13

シリーズ名:

ECS transactions

シリーズ巻号:

6(4)

発行年:

2007

開始ページ:

387

終了ページ:

392

総ページ数:

6

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775533 [1566775531]

言語:

英語

請求記号:

E23400/6-4

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047128
シリーズID:	PA00000034
会議名:	International Symposium on Silicon-on-Insulator Technology and Devices ; Meeting of the Electrochemical Society
回次:	13th ; 211th
会議開催地:	Chicago, Illinois, USA
会議開催年:	2007.05.06-2007.05.11

類似資料:

1 国際会議録 Improved Model to Determine the Generation Lifetime in Double Gate SOI nMOSFETs M. Galeti, J. A. Martino, E. Simoen, C. Claeys Electrochemical Society	7 国際会議録 Evaluation of the Channel Engineering Impact on the Analog Performance of Deep-Submicrometer Partially Depleted SOI MOSFETs at Low Temperatures Pavanello, M. A., Martino, J. A., Simoen, E., Claeys, C. Electrochemical Society
2 国際会議録 Temperature and Oxide Thickness Influence on the Generation Lifetime Determination in Partially Depleted SOI NMOSFETs Galeti, M., Martino, J. A., Simoen, E., Claeys, C. Electrochemical Society	8 国際会議録 Analysis of deep submicrometer bulk and fully depleted SOI NMOSFET analog operation at cryogenic temperatures Pavanello, M.A., Martino, J.A., Simoen, E., Claeys, C. Electrochemical Society
3 国際会議録 Impact of Halo Implantation on the Lifetime Assessment in Partially Depleted SOI Transistors M. Galeti, J. A. Martino, E. R. Simoen, C. L. Claeys Electrochemical Society	9 国際会議録 The Length-Dependence of the 1/f Noise of Graded-Channel SOI nMOSFETs E. Simoen, C. Claeys, T. M. Chung, D. Flandre, J. Raskin Electrochemical Society
4 国際会議録 Temperature Influence on the Generation Lifetime Determination Based on Drain Current Transients in Partially Depleted SOI nMOSFETs Martino, J.A., Rafi, J.M., Mercha, A., Simoen, E., Claeys, C. Electrochemical Society	10 国際会議録 Analysis of the Linear Kink Effect in Partially Depleted SOI NMOSFETs Agopian, P. G., Martino, J. A., Simoen, E., Claeys, C. Electrochemical Society
5 国際会議録 Comparison between Bulk and Floating Body Partially Depleted SOI NMOSFETs for High Frequency Analog Applications Operating from 300 K down to 95 K Pavanello, M. A., Martino, J. A., Simoen, E., Claeys, C. Electrochemical Society	11 国際会議録 The "C" Shape Behavior of the Floating Body Effect in Function of Temperature in PD SOI nMOSFETs P. G. Agopian, J. A. Martino, E. Simoen, C. Claeys Electrochemical Society
6 国際会議録 Behavior of Graded-Channel Fully Depleted SOI NMOSFET at High Temperatures Galeti, M., Pavanello, M.A., Martino, J.A. Electrochemical Society	12 国際会議録 The Impact of the Gate Oxide Thickness Reduction on the Gate Induced Floating Body Effect in SOI nMOSFETs P. G. DerAgopian, J. A. Martino, E. Simoen, C. Claeys Electrochemical Society

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