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Application of Double Gate Graded-Channel SOI in MOSFET-C Balanced Structures

著者名:
掲載資料名:
Silicon-on-insulator technology and devices 13
シリーズ名:
ECS transactions
シリーズ巻号:
6(4)
発行年:
2007
開始ページ:
217
終了ページ:
224
総ページ数:
8
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775533 [1566775531]
言語:
英語
請求記号:
E23400/6-4
資料種別:
国際会議録

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