Temperature Influences on FinFETs with Undoped Body

Temperature Influences on FinFETs with Undoped Body

著者名:

M. A. Pavanello

掲載資料名:

Silicon-on-insulator technology and devices 13

シリーズ名:

ECS transactions

シリーズ巻号:

6(4)

発行年:

2007

開始ページ:

211

終了ページ:

216

総ページ数:

6

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775533 [1566775531]

言語:

英語

請求記号:

E23400/6-4

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047128
シリーズID:	PA00000034
会議名:	International Symposium on Silicon-on-Insulator Technology and Devices ; Meeting of the Electrochemical Society
回次:	13th ; 211th
会議開催地:	Chicago, Illinois, USA
会議開催年:	2007.05.06-2007.05.11

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3 国際会議録 Influence of Fin Width on the Intrinsic Voltage Gain of Standard and Strained Triple-Gate nFinFETs M.A. Pavanello, J.A. Martino, E. Simoen, R. Rooyackers, N. Collaert Electrochemical Society	9 国際会議録 Temperature and Oxide Thickness Influence on the Generation Lifetime Determination in Partially Depleted SOI NMOSFETs Galeti, M., Martino, J. A., Simoen, E., Claeys, C. Electrochemical Society
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