Nitride-based Ohmic and Schottky Contacts to GaN

Nitride-based Ohmic and Schottky Contacts to GaN

著者名:

L. F. Voss

掲載資料名:

State-of-the-art program on compound semiconductors 46 (SOTAPOCS 46) and processes at the semiconductor/solution interface 2

シリーズ名:

ECS transactions

シリーズ巻号:

6(2)

発行年:

2007

開始ページ:

191

終了ページ:

200

総ページ数:

10

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775519 [1566775515]

言語:

英語

請求記号:

E23400/6-2

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047126
シリーズID:	PA00000034
会議名:	State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; International Symposium on Processes at the Semiconductor-Solution Interface ; Meeting of the Electrochemical Society
回次:	46th ; 2nd ; 211th
会議開催地:	Chicago, IL, USA
会議開催年:	2007.05.06-2007.05.10

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