Defect Free Embedded Silicon Carbon Stressor Selectively Grown into Recessed Source Drain Areas of NMOS Devices

Defect Free Embedded Silicon Carbon Stressor Selectively Grown into Recessed Source Drain Areas of NMOS Devices

著者名:

掲載資料名:

Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment

シリーズ名:

ECS transactions

シリーズ巻号:

6(1)

発行年:

2007

開始ページ:

419

終了ページ:

428

総ページ数:

10

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775502 [1566775507]

言語:

英語

請求記号:

E23400/6-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047125
シリーズID:	PA00000034
会議名:	International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS ; Meeting of the Electrochemical Society
回次:	3rd ; 211th
会議開催地:	Chicago, IL, USA
会議開催年:	2007.05.06-2007.05.10

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