DyScHfOx as High-k Gate Dielectrics: Structural and Electrical Properties
- 著者名:
C. Adelmann S. Van Elshocht P. Lehnen T. Canard A. Franquet C. Zhao L. Ragnarsson V. Chang H. Choi Y. Hong-Yu S. De Gendt - 掲載資料名:
- Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment
- シリーズ名:
- ECS transactions
- シリーズ巻号:
- 6(1)
- 発行年:
- 2007
- 開始ページ:
- 113
- 終了ページ:
- 120
- 総ページ数:
- 8
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 19385862
- ISBN:
- 9781566775502 [1566775507]
- 言語:
- 英語
- 請求記号:
- E23400/6-1
- 資料種別:
- 国際会議録
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