Improved Current Drivability and Gate Stack Integrity using Buried SiC Layer for Strained Si/SiGe Chaimel Devices

Improved Current Drivability and Gate Stack Integrity using Buried SiC Layer for Strained Si/SiGe Chaimel Devices

著者名:

H. Zang

掲載資料名:

Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment

シリーズ名:

ECS transactions

シリーズ巻号:

6(1)

発行年:

2007

開始ページ:

105

終了ページ:

112

総ページ数:

8

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775502 [1566775507]

言語:

英語

請求記号:

E23400/6-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047125
シリーズID:	PA00000034
会議名:	International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS ; Meeting of the Electrochemical Society
回次:	3rd ; 211th
会議開催地:	Chicago, IL, USA
会議開催年:	2007.05.06-2007.05.10

類似資料:

1 国際会議録 GaAs Heteroepitaxy on SiGe-on-Insulator Using Ge Condensation and Migration Enhanced Epitaxy H. Oh, K. Choi, W. Loh, T. Htoo, S. Chua, B. Cho Electrochemical Society	7 国際会議録 EFFECTS OF SILICON ION IMPLANTATION UPON THIN GATE OXIDE INTEGRITY Lee, G.-S., Park, J. -G., Choi, S. -P., Shin, C.-H,, Sun, Y.-B, Kwak, Y.-S., Shin, C.-K., Smith, W. L., Hahn, S. Materials Research Society
2 国際会議録 Dopant Segregated Pt and Ni Germanosilicide Schottky S/D p-MOSFETs with Strained Si-SiGe Channel H. Zang, C. Chua, W. Loh, B. Cho Electrochemical Society	8 国際会議録 17 Properties of the Interfacial Layer in the High-k Gate Stack and Transistor Performance Bersuker, G., Peterson, J., Burnett, J., Korkin, A., Sim, J.H., Choi, R., Lee, B. H., Greer, J., Lysaght, P., Huff, H.R. Electrochemical Society
3 国際会議録 Gate Oxide Integrity for Polysilicon Thin-Film Transistors: A Comparative Study for ELC, MILC, and SPC Crystallized Active Polysilicon Layer Choi, D.C., Choi, B.D., Jung, J.Y., Park, H.H., Seo, J.W., Lee, K.Y., Chung, H.K. Materials Research Society	9 国際会議録 SELECTIVE ETCHING OF SiGe FOR REMOVAL OF DUMMY LAYERS IN FULLY SILICIDED GATE ARCHITECTURES J. Snow, R. Vos, K. G. Anil, H. Kraus, K. Xu, F. Grinninger, G. Wagner, F. Kovacs, P. W. Mertens Electrochemical Society
4 国際会議録 Integration Issues with High k Gate Stacks* Osburn, C.M., Han, S.K., Kim, I., Campbell, S.A., Garfunkel, E., Gustafson, T., Hauser, J., King, T.-J., Liu, Q., … Electrochemical Society	10 国際会議録 GaAs-based 1.3 um quantum dot laser diode with 3-stacked InAs DWELL (dots-in-a-well) structure and Al0.7Ga0.3As cladding layer [6129-10] Kim, K W, Cho, N K, Ryu, S. P., Song, J. D., Choi, W. J., Lee, J I, Park, J. H. SPIE - The International Society of Optical Engineering
5 国際会議録 33 ALD of Advanced High-k and Metal Gate Stacks for MOS Devices Gutt, J., Gopalan, S., Brown, G. A., Kirsch, P. D., Peterson, J. J., Gardner, M., Li, H.-J., Lysaght, P., Alshareef, H. … Electrochemical Society	11 国際会議録 Integral imaging with variable image planes using polymer-dispersed liquid crystal layers Y. Kim, H. Choi, J. Kim, S.-W. Cho, B. Lee SPIE - The International Society of Optical Engineering
6 国際会議録 Gate Oxide Integrity of SiGe P-MOSFET With High Current Drive* Chin, Albert Electrochemical Society	12 国際会議録 Resonant Tunneling fo Holes in Strained Layers-SiGe/Si Wang L. K., Chern H. C. Plenum Press

1

2

3

4

5

6

7

8

9

10

11

12