Early Voltage Behavior in Circular Gate SOI nMOSFET Using 0.13 μm Partially-Depleted SOI CMOS Technology

Early Voltage Behavior in Circular Gate SOI nMOSFET Using 0.13 μm Partially-Depleted SOI CMOS Technology

著者名:

掲載資料名:

Microelectronics Technology and Devices : SBMICRO 2006

シリーズ名:

ECS transactions

シリーズ巻号:

4(1)

発行年:

2006

開始ページ:

309

終了ページ:

318

総ページ数:

10

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775120 [1566775124]

言語:

英語

請求記号:

E23400/4-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047123
シリーズID:	PA00000034
会議名:	International Symposium on Microelectronics Technology and Devices : SBMicro
回次:	21th : 2006
会議開催地:	Ouro Preto, MG, Brazil
会議開催年:	2006.08.28-2006.09.01

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