GaN-Based Devices for Reliable Operation at Very High Temperatures | 東京工業大学附属図書館文献データベース

Blank Cover Image

GaN-Based Devices for Reliable Operation at Very High Temperatures

著者名:

さらに 6 件

掲載資料名:

State-of-the-art program on compound semiconductors 45 (SOTAPOCS 45) and wide bandgap semiconductor materials and devices 7

シリーズ名:

ECS transactions

シリーズ巻号:

3(5)

発行年:

2006

開始ページ:

349

終了ページ:

358

総ページ数:

10

出版情報:

Pennington, N.J: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775052 [1566775051]

言語:

英語

請求記号:

E23400/3-5

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047113
シリーズID:	PA00000034
会議名:	Meeting of the Electrochemical Society
回次:	210th
会議開催地:	Cancun, Mexico
会議開催年:	2006.10.29-2006.11.03

類似資料:

1 国際会議録 Novel Thermally Stable Contacts to GaN L. Stafford, R. Khanna, L. Voss, S. J. Pearton, F. Ren, T. J. Anderson, A. Dabiran, A. Osinsky Electrochemical Society	7 国際会議録 Hydrogen-Induced Reversible Changes in Drain Current of Pt-Gated AlGaN/GaN High Electron Mobility Transistors (HEMT) H. T. Wang, B. S. Kang, F. Ren, R. C. Fitch, J. K. Gillespie, N. Moser, G. Jessen, T. Jenkins, R. Dettmer, D. Via, A. … Electrochemical Society
2 国際会議録 High Temperature Stable Contacts for GaN HEMTs and LEDs S. Pearton, L. Voss, R. Khanna, L. Stafford, F. Ren, A. Dabiran, A. Osinsky Materials Research Society	8 国際会議録 Effect of Silicon Nitride PECVD Growth on AlGaN/GaN HEMT Dispersion and Breakdown Characteristics Fitch, R., Gillespie, J., Via, D., Agresta, D., Jenkins, T., Jessen, G., Moser, N., Crespo, A., Dabiran, A., Osinsk, A. Electrochemical Society
3 国際会議録 Carrier Trapping and Thermal Effects in GaN-based High-electron Mobility Transistors Dabiran, A.M., Osinsky, A., Chow, P.P., Zhang, Z., Madjar, A., Osinsky, S., Hwang, J.C.M., Fitch, R.C., Gillespie, J., … Electrochemical Society	9 国際会議録 Robust Detection of Hydrogen Using Differential AlGaN/GaN High Electron Mobility Transistor Sensing Diodes H. Wang, F. Anderson, F. Pen, C. Li, Z. Low, J. Lin, B. Gila, S. Pearton, A. Dabiran, A. Osinsky Electrochemical Society
4 国際会議録 W2B Based High Thermal Stability Ohmic Contacts to n-GaN Khanna, Rohit, Pearton, S. J., Kao, C. J., Kravchenko, I., Ren, F., Chi, G. C., Dabiran, A., Osinsky, A. Materials Research Society	10 国際会議録 Fabrication of ZnO/GaN Hybrid Light-Emitting Diodes S. Y. Han, H. S. Yang, Y. W. Heo, K. H. Baik, D. P. Norton, S. J. Pearton, F. Ren, A. Osinsky, J. W. Dong, B. Hertog, A. … Electrochemical Society
5 国際会議録 Improved Oxide Passivation of AlGaN/GaN High Electron Mobility Transistors T. Anderson, B. P. Gila, M. Hiad, A. H. Onstine, R. Frazier, G. T. Thaler, A. Herrero, E. Lambers, C. R. Abernathy, S. … Electrochemical Society	11 国際会議録 Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface Ren, F., Luo, B., Kim, J., Mehandru, R., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Fitch, R., … Materials Research Society
6 国際会議録 Dramatic Improvements in AIGaN/GaN HEMT Device Isolation Characteristics After UV-Ozone Pre-Treatment Moser, N., Fitch, R., Via, D., Crespo, A., Yannuzzi, M., Jessen, G., Gillespie, J., Luo, B., Ren, F., Abernathy, C., … Electrochemical Society	12 国際会議録 Novel Tungsten Boride Based High Thermal Stability Ohmic Contacts to N-GaN R. Khanna, S. J. Pearton, F. Ren, I. Kravchenko, C. J. Kao, G. C. Chi Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12