Improved GaN Homo-Junction, Ultraviolet, Light-Emitting Diodes Grown on Step- Free 4H-SiC Mesas | 東京工業大学附属図書館文献データベース

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Improved GaN Homo-Junction, Ultraviolet, Light-Emitting Diodes Grown on Step- Free 4H-SiC Mesas

著者名:

さらに 9 件

掲載資料名:

State-of-the-art program on compound semiconductors 45 (SOTAPOCS 45) and wide bandgap semiconductor materials and devices 7

シリーズ名:

ECS transactions

シリーズ巻号:

3(5)

発行年:

2006

開始ページ:

189

終了ページ:

198

総ページ数:

10

出版情報:

Pennington, N.J: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775052 [1566775051]

言語:

英語

請求記号:

E23400/3-5

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047113
シリーズID:	PA00000034
会議名:	Meeting of the Electrochemical Society
回次:	210th
会議開催地:	Cancun, Mexico
会議開催年:	2006.10.29-2006.11.03

類似資料:

1 国際会議録 Recent Results From Epitaxial Growth on Step Free 4H-SiC Mesas Philip G. Neudeck, Andrew J. Trunek, David J. Spry, J. Anthony Powell, Hui Du, Marek Skowronski, Nabil D. Bassim, … Materials Research Society	7 国際会議録 Growth of Defect-Free 3C-SiC on 4H- and 6H-SiC Mesas Using Step-Free Surface Heteroepitaxy Neudeck, P.G., Powell, J.A., Trunek, A.J., Huang, X.R., Dudley, M. Trans Tech Publications
2 国際会議録 Reduction of Derects in GaN Epitaxial Films Grown Heteroepitaxially on SiC Eddy, C.R.,Jr., Bassim, N.D., Mastro, M.A., Henry, R.L., Twigg, M.E., Holm, R.T., Culbertson, J.C., Neudeck, P.G., … Trans Tech Publications	8 国際会議録 Growth of Defect-Free 3C-SiC on 4H- and 6H-SiC Mesas Using Step-Free Surface Heteroepitaxy Neudeck, P.G., Powell, J.A., Trunek, A.J., Huang, X.R., Dudley, M. Trans Tech Publications
3 国際会議録 Relaxation Mechanism of the Defect-Free 3C-SiC Epitaxial Films Grown on Step-Free 4H SiC Mesas Du, H., Skowronski, M., Neudeck, P.G., Trunek, A.J., Spry, D.J., Powell, J.A. Trans Tech Publications	9 国際会議録 High Breakdown Field p-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC Mesas Spry, D.J., Trunek, A.J., Neudeck, P.G. Trans Tech Publications
4 国際会議録 Electron Microscopy Investigation of the Role of Surface Steps in the Generation of Dislocations during MOCVD Growth of GaN on 4H-SiC Bassim, N.D., Twigg, M.E., Mastro, M.A., Neudeck, P.G., Eddy, C.R.Jr., Henry, R.L., Holm, R.N., Powell, J.A., Trunek, … Trans Tech Publications	10 国際会議録 Enhanced Light Extraction from Gallium Nitride Optoelectronics on Si Substrates M. Mastro, R. Holm, J.D. Caldwell, N. Bassim, R. Henry Electrochemical Society
5 国際会議録 Growth Evolution of Gallium Nitride Films on Stepped and Step-Free SiC Surfaces Eddy, Charles R. Jr., Culbertson, James C., Bassim, Nabil D., Twigg, Mark E., Holm, Ronald T., Stahlbush, Robert E., … Materials Research Society	11 国際会議録 Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers Neudeck, P.G., Powell, J.A., Trunek, A.J., Spry, D.J. Trans Tech Publications
6 国際会議録 Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy Neudeck, P.G., Powell, J.A., Spry, D.J., Trunek, A.J., Huang, X., Vetter, W.M., Dudley, M., Skowronski, M., Liu, J. Trans Tech Publications	12 国際会議録 Measurements of Breakdown Field and Forward Current Stability in 3C-SiC pn Junction Diodes Grown on Step-Free 4H-SiC Neudeck, P.G., Spry, D.J., Trunek, A.J. Trans Tech Publications

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