Approaches to Reduced-Defect Active Regions for III-N Devices | 東京工業大学附属図書館文献データベース

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Approaches to Reduced-Defect Active Regions for III-N Devices

著者名:

さらに 11 件

掲載資料名:

State-of-the-art program on compound semiconductors 45 (SOTAPOCS 45) and wide bandgap semiconductor materials and devices 7

シリーズ名:

ECS transactions

シリーズ巻号:

3(5)

発行年:

2006

開始ページ:

117

終了ページ:

126

総ページ数:

10

出版情報:

Pennington, N.J: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775052 [1566775051]

言語:

英語

請求記号:

E23400/3-5

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047113
シリーズID:	PA00000034
会議名:	Meeting of the Electrochemical Society
回次:	210th
会議開催地:	Cancun, Mexico
会議開催年:	2006.10.29-2006.11.03

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