Regular Dislocation Networks in Silicon as a Tool for Novel Device Application
- 著者名:
M. Kittler M. Reiche W. Seifert X. Yu T. Arguirov O. Vyvenko T. Mchedlidze T. Wilhelm - 掲載資料名:
- High purity silicon 9
- シリーズ名:
- ECS transactions
- シリーズ巻号:
- 3(4)
- 発行年:
- 2006
- 開始ページ:
- 429
- 終了ページ:
- 450
- 総ページ数:
- 22
- 出版情報:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 19385862
- ISBN:
- 9781566775045 [1566775043]
- 言語:
- 英語
- 請求記号:
- E23400/3-4
- 資料種別:
- 国際会議録
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11
国際会議録
On the Influence of Transition Metal Impurities on the Oxygen Precipitation in CZ-Grown Silicon
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