Impact of Halo Implantation on the Lifetime Assessment in Partially Depleted SOI Transistors

Impact of Halo Implantation on the Lifetime Assessment in Partially Depleted SOI Transistors

著者名:

掲載資料名:

High purity silicon 9

シリーズ名:

ECS transactions

シリーズ巻号:

3(4)

発行年:

2006

開始ページ:

351

終了ページ:

360

総ページ数:

10

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775045 [1566775043]

言語:

英語

請求記号:

E23400/3-4

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047112
シリーズID:	PA00000034
会議名:	International Symposium on High Purity Silicon ; Meeting of the Electrochemical Society
回次:	2006 ; 210th
会議開催地:	Cancun, Mexico
会議開催年:	2006.10.29-2006.11.03

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6 国際会議録 Temperature Influence on the Generation Lifetime Determination Based on Drain Current Transients in Partially Depleted SOI nMOSFETs Martino, J.A., Rafi, J.M., Mercha, A., Simoen, E., Claeys, C. Electrochemical Society	12 国際会議録 Analysis of deep submicrometer bulk and fully depleted SOI NMOSFET analog operation at cryogenic temperatures Pavanello, M.A., Martino, J.A., Simoen, E., Claeys, C. Electrochemical Society

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