Nitrogen-Doped Silicon: Mechanical, Transport and Electrical Properties

Nitrogen-Doped Silicon: Mechanical, Transport and Electrical Properties

著者名:

J. D. Murphy

掲載資料名:

High purity silicon 9

シリーズ名:

ECS transactions

シリーズ巻号:

3(4)

発行年:

2006

開始ページ:

239

終了ページ:

254

総ページ数:

16

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775045 [1566775043]

言語:

英語

請求記号:

E23400/3-4

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047112
シリーズID:	PA00000034
会議名:	International Symposium on High Purity Silicon ; Meeting of the Electrochemical Society
回次:	2006 ; 210th
会議開催地:	Cancun, Mexico
会議開催年:	2006.10.29-2006.11.03

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2 国際会議録 Impurity Locking of Dislocations in Silicon （Invited Paper） Giannattasio, A., Murphy, ID., Senkader, S., Falster, R.J., Wilshaw, P.R. Electrochemical Society	8 国際会議録 Light Emission From Erbium-Doped Si1-xGex Heterostructures Evans-Freeman, J. H., Naveed, A. T., Huda, M. Q., Peaker, A. R., Houghton, D. C., Wright, A. C. MRS - Materials Research Society
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