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High Pulling Rate Defect-Free Crystals with Axially Asymmetric Characteristics Due to Controlled Melt Convection

著者名:
掲載資料名:
High purity silicon 9
シリーズ名:
ECS transactions
シリーズ巻号:
3(4)
発行年:
2006
開始ページ:
31
終了ページ:
40
総ページ数:
10
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775045 [1566775043]
言語:
英語
請求記号:
E23400/3-4
資料種別:
国際会議録

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