The Improvement in Dielectric Characteristics and Reliability of Atomic-Layer-Deposited HfO₂ Thin Films by In-Situ NH₃ Injection

The Improvement in Dielectric Characteristics and Reliability of Atomic-Layer-Deposited HfO₂ Thin Films by In-Situ NH₃ Injection

著者名:

J. Kim

掲載資料名:

Physics and technology of high-k gate dielectrics 4

シリーズ名:

ECS transactions

シリーズ巻号:

3(3)

発行年:

2006

開始ページ:

435

終了ページ:

440

総ページ数:

6

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775038 [1566775035]

言語:

英語

請求記号:

E23400/3-3

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047111
シリーズID:	PA00000034
会議名:	International Symposium on High Dielectric Constant Gate Stacks ; Meeting of the Electrochemical Society
回次:	4th ; 210th
会議開催地:	Cancun, Mexico
会議開催年:	2006.10.30-2006.11.03

類似資料:

1 国際会議録 Crystallization and Wet Etching Characteristics of Atomic Layer Deposited HfO₂ Films Using Hf[N(CH₃)(C₂H₅)]₃[OC(CH₃)₃]) Precursor and O₃ Oxidant M. Seo, S. Kim, K. Kim, T. Park, J. Kim, C. Hwang, H. Cho Electrochemical Society	7 国際会議録 Comparison of Electrical and Structural Properties of HfO₂ Thin Films on Strained and Relaxed Si_1-xGe_x T. Park, J. Kim, C. Hwang Electrochemical Society
2 国際会議録 Influence of Deposition Temperature of Atomic-Layer-Deposited HfO₂ Films on Interfacial Chemical Structure and Interface Trap Density J. Kim, T. Park, C. Hwang, S. H. Hong, M. Seo Electrochemical Society	8 国際会議録 Characteristics of ZrO2/Al2O3 Bilayer Film for Gate Dielectric Applications Deposited by Atomic Layer Deposition Method Kim, Y.D., Lee, J.H., Koo, J.H, Chang, H.J., Jeon, H.T. Trans Tech Publications
3 国際会議録 Improvement in Thermal Stability of MOCVD HfO₂ Films Using an ALD SiNx Interfacial Layer H. J. Jang, S. H. Hong, T. Park, J. Heo, S. Yang, M. Kim, C. Hwang Electrochemical Society	9 国際会議録 Characteristics of the HfO₂ Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate H. Kong. S. Kim, J. Kim, J. Choi, H. Jeon, C. Bae Electrochemical Society
4 国際会議録 Correlation Between High-K Properties and Interfacial Chemical Structure of ALD HhO2 Thin Films on Si, Sil-xGex and Ge Substrates T. Park, J. Kim, J. Jang, M. Seo, C. Hwang Electrochemical Society	10 国際会議録 Spectroscopic Ellipsometry in the VUV Range Applied to the Characterization of Atomic Layer Deposited HfO2, Al2O3 and HfAIO x Thin Layers for High K Dielectrics Boher, P., Defranoux, C., Bourtauld, S., Piel, J.P., Bender, H. SPIE-The International Society for Optical Engineering
5 国際会議録 Influence of an In-Situ Formed Interfacial SINx Layer on the Electrical Performance and Thermal Stability of High-k HfO₂ Films S. H. Hong, J. Kim, T. Park, J. Won, R. Jung, S. Kim, C. Hwang, M. J. Cho Electrochemical Society	11 国際会議録 TuD3:Crystallization behavior of sputter-deposited nitrogen-doped amorphous Ge2Sb2Te5 thin films Seo,H., Jeong,T.-H., Park,J.-W., Yeon,C., Lee,D.-C., Kim,S.-J., Lim,H.-J., Kim,S.-Y. SPIE - The International Society for Optical Engineering
6 国際会議録 Electrical and Structural Properties of High-K HfO₂ on Si₁₋x Gex Substrates C. Hwang, T. Park, J. Kim, S. H. Hong, M. Seo, J. H. Jang Electrochemical Society	12 国際会議録 28 Growth and characterization of Al2O3:HfO2 nanolaminate films deposited by Atomic Layer Deposition D'Emic, C.P., Gusev, E.P., Copel, M., Newbury, I., Unvel, H., Kozlowski, P., Bruley, J., Murphy, R. Electrochemical Society

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